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3D-Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device.
- Source :
-
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Aug 23, pp. e2405338. Date of Electronic Publication: 2024 Aug 23. - Publication Year :
- 2024
- Publisher :
- Ahead of Print
-
Abstract
- Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide-bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.<br /> (© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)
Details
- Language :
- English
- ISSN :
- 1521-4095
- Database :
- MEDLINE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Publication Type :
- Academic Journal
- Accession number :
- 39177116
- Full Text :
- https://doi.org/10.1002/adma.202405338