Cite
Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors.
MLA
Kim, Minjae, et al. “Processes to Enable Hysteresis-Free Operation of Ultrathin ALD Te p-Channel Field-Effect Transistors.” Nanoscale Horizons, Aug. 2024. EBSCOhost, https://doi.org/10.1039/d4nh00339j.
APA
Kim, M., Lee, Y., Kim, K., Pham, G.-H., Kim, K., Jun, J. H., Lee, H.-W., Yoon, S., Hwang, H. J., Sung, M. M., & Lee, B. H. (2024). Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors. Nanoscale Horizons. https://doi.org/10.1039/d4nh00339j
Chicago
Kim, Minjae, Yongsu Lee, Kyuheon Kim, Giang-Hoang Pham, Kiyung Kim, Jae Hyeon Jun, Hae-Won Lee, et al. 2024. “Processes to Enable Hysteresis-Free Operation of Ultrathin ALD Te p-Channel Field-Effect Transistors.” Nanoscale Horizons, August. doi:10.1039/d4nh00339j.