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Multivariate growth analysis on D0 19 -phase Mn 3 Ga kagome-based topological antiferromagnets.
- Source :
-
Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2024 Oct 23; Vol. 37 (2). Date of Electronic Publication: 2024 Oct 23. - Publication Year :
- 2024
-
Abstract
- The combination of antiferromagnetism and topological properties in Mn <subscript>3</subscript> X (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of Mn <subscript>3</subscript> Ga thin films on SiO <subscript>2</subscript> (001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick Mn <subscript>3</subscript> Ga films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) Mn <subscript>3</subscript> Ga(002) phase from the relatively thin Mn <subscript>3</subscript> Ga films after annealing at 773 K. The investigation of the growth mechanism of Mn <subscript>3</subscript> Ga polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.<br /> (© 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.)
Details
- Language :
- English
- ISSN :
- 1361-648X
- Volume :
- 37
- Issue :
- 2
- Database :
- MEDLINE
- Journal :
- Journal of physics. Condensed matter : an Institute of Physics journal
- Publication Type :
- Academic Journal
- Accession number :
- 39348857
- Full Text :
- https://doi.org/10.1088/1361-648X/ad81a4