Solution-Processed TiO 2 /ZnFe 2 O 4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity.

MLA

Kaith, Priya, et al. “Solution-Processed TiO 2 /ZnFe 2 O 4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity.” ACS Applied Materials & Interfaces, vol. 16, no. 46, Nov. 2024, pp. 63769–77. EBSCOhost, https://doi.org/10.1021/acsami.4c14199.

APA

Kaith, P., Garg, P., Nagar, V., & Bera, A. (2024). Solution-Processed TiO 2 /ZnFe 2 O 4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity. ACS Applied Materials & Interfaces, 16(46), 63769–63777. https://doi.org/10.1021/acsami.4c14199

Chicago

Kaith, Priya, Parul Garg, Vishal Nagar, and Ashok Bera. 2024. “Solution-Processed TiO 2 /ZnFe 2 O 4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity.” ACS Applied Materials & Interfaces 16 (46): 63769–77. doi:10.1021/acsami.4c14199.