Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories.

MLA

Guan, Ping, et al. “Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories.” ACS Applied Materials & Interfaces, vol. 16, no. 48, Dec. 2024, pp. 66239–49. EBSCOhost, https://doi.org/10.1021/acsami.4c09526.

APA

Guan, P., Wu, S., Meng, H., Li, Z., Liu, M., An, Y., Liu, Y., Xu, S., & Cao, S. (2024). Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories. ACS Applied Materials & Interfaces, 16(48), 66239–66249. https://doi.org/10.1021/acsami.4c09526

Chicago

Guan, Ping, Shuaixin Wu, Haoyan Meng, Zhenya Li, Mengru Liu, Yuping An, Yingliang Liu, Shengang Xu, and Shaokui Cao. 2024. “Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories.” ACS Applied Materials & Interfaces 16 (48): 66239–49. doi:10.1021/acsami.4c09526.