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Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study.

Authors :
Faverzani M
Calcaterra S
Biagioni P
Frigerio J
Source :
Nanophotonics (Berlin, Germany) [Nanophotonics] 2024 Jan 24; Vol. 13 (10), pp. 1693-1700. Date of Electronic Publication: 2024 Jan 24 (Print Publication: 2024).
Publication Year :
2024

Abstract

In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.<br />Competing Interests: Conflict of interest: Authors state no conflicts of interest.<br /> (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)

Details

Language :
English
ISSN :
2192-8614
Volume :
13
Issue :
10
Database :
MEDLINE
Journal :
Nanophotonics (Berlin, Germany)
Publication Type :
Academic Journal
Accession number :
39635615
Full Text :
https://doi.org/10.1515/nanoph-2023-0730