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Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study.
- Source :
-
Nanophotonics (Berlin, Germany) [Nanophotonics] 2024 Jan 24; Vol. 13 (10), pp. 1693-1700. Date of Electronic Publication: 2024 Jan 24 (Print Publication: 2024). - Publication Year :
- 2024
-
Abstract
- In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.<br />Competing Interests: Conflict of interest: Authors state no conflicts of interest.<br /> (© 2024 the author(s), published by De Gruyter, Berlin/Boston.)
Details
- Language :
- English
- ISSN :
- 2192-8614
- Volume :
- 13
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Nanophotonics (Berlin, Germany)
- Publication Type :
- Academic Journal
- Accession number :
- 39635615
- Full Text :
- https://doi.org/10.1515/nanoph-2023-0730