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Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate.
- Source :
- Applied Physics Express; Dec2008, Vol. 1 Issue 12, p1-1, 1p
- Publication Year :
- 2008
-
Abstract
- We have fabricated and characterized blue (Ga,In)N/GaN multiple quantum well light emitting diodes grown on a Si(110) substrate by molecular beam epitaxy. For a 20 mA current, we have found that the operating voltage and the series resistance are as low as 3.5 V and 17 Ω, respectively. A maximum light output power of 72 µW is obtained as measured on the wafer. These characteristics are almost identical to those obtained on a reference sample grown on the commonly used Si(111) orientation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 1
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 100161505
- Full Text :
- https://doi.org/10.1143/APEX.1.121101