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Erratum: “Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates”.
- Source :
- Applied Physics Express; Mar2011, Vol. 4 Issue 3, p1-1, 1p
- Publication Year :
- 2011
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 4
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 100174416
- Full Text :
- https://doi.org/10.1143/APEX.4.039201