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Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates.
- Source :
- Applied Physics Express; May2014, Vol. 7 Issue 5, p1-1, 1p
- Publication Year :
- 2014
-
Abstract
- An Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>N/GaN/Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N double-heterostructure field effect transistor (DH-FET) structure was grown on a 150-mm-diameter Si substrate and the crystalline quality of the epitaxial material was found to be comparable to that of an Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>N/GaN single-heterostructure field effect transistor (SH-FET) structure. The fabricated DH-FET shows a lower buffer leakage current of 9.2 × 10<superscript>−5</superscript> mA/mm and an improved off-state breakdown voltage of higher than 200 V, whereas the SH-FET shows a much higher buffer leakage current of 6.0 × 10<superscript>−3</superscript> mA/mm and a lower breakdown voltage of 130 V. These significant improvements show that the Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>N/GaN/Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N DH-FET is an effective structure for high-power electronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 7
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 100195104
- Full Text :
- https://doi.org/10.7567/APEX.7.055501