Active metasurface for controlling reflection and absorption properties.

A novel active metasurface is proposed in this paper. The proposed metasurface can be electronically switched between the reflection and the absorption modes by a tunable component, such as a PIN diode. When the PIN diode is in the on-state, the proposed metasurface exhibits near-perfect absorptivity at 10 GHz. On the other hand, when the PIN diode is in the off-state, the proposed metasurface exhibits near-perfect reflectivity over a wide bandwidth at 10 GHz. A unit cell is designed to include a DC bias network, which yields reliable performance. [ABSTRACT FROM AUTHOR]