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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate.
- Source :
- Applied Physics Express; Nov2014, Vol. 7 Issue 11, p1-1, 1p
- Publication Year :
- 2014
-
Abstract
- A low-temperature (LT) AlGaN interlayer is inserted in the Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N back barrier layer of an Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>N/GaN/Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N double heterostructure grown on a 150 mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N back barrier layer, especially for screw dislocation reduction. In addition, a buffer breakdown voltage higher than 600 V is achieved, which is much higher than those of conventional heterostructures. These results demonstrate the effectiveness of combining the LT-AlGaN interlayer and the Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>N/GaN/Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>N double heterostructure on a Si substrate to increase the breakdown voltage for high-power applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18820778
- Volume :
- 7
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Express
- Publication Type :
- Academic Journal
- Accession number :
- 100195302
- Full Text :
- https://doi.org/10.7567/APEX.7.115501