Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance.

In this work, we present a novel device technology of using Schottky source/drain (SSD) in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) for off-state breakdown voltage V_BD improvement. The Schottky source/drain design can effectively prevent the source carrier injection compared to the conventional MISHEMTs, leading to enhanced V_BD in the SSD MISHEMTs. A V_BD of 460 V is obtained in an InAlN/GaN SSD MISHEMTs with low specific R_on of 2.27 mΩ·cm², at a 170% V_BD improvement compared to conventional MISHEMTs. Despite the Schottky source/drain used, a SSD MISHEMT with a gate length of 1 µm exhibits respectable drain current density of 416 mA/mm and transconductance of 113 mS/mm. [ABSTRACT FROM AUTHOR]