Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor.

MLA

Nakayama, Koji, et al. “Minimum Gate Trigger Current Degradation in 4.5 KV 4H-SiC Commutated Gate Turn-off Thyristor.” Japanese Journal of Applied Physics, vol. 53, no. 4, Apr. 2014, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.53.044101.

APA

Nakayama, K., Tanaka, A., Ogata, S., Izumi, T., Hayashi, T., & Asano, K. (2014). Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor. Japanese Journal of Applied Physics, 53(4), 1. https://doi.org/10.7567/JJAP.53.044101

Chicago

Nakayama, Koji, Atsushi Tanaka, Shuji Ogata, Toru Izumi, Toshihiko Hayashi, and Katsunori Asano. 2014. “Minimum Gate Trigger Current Degradation in 4.5 KV 4H-SiC Commutated Gate Turn-off Thyristor.” Japanese Journal of Applied Physics 53 (4): 1. doi:10.7567/JJAP.53.044101.