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Design of X-Band GaN Phase Shifters.
- Source :
- IEEE Transactions on Microwave Theory & Techniques; Jan2015, Vol. 63 Issue 1, p244-255, 12p
- Publication Year :
- 2015
-
Abstract
- This paper presents two different types of high-power gallium–nitride (GaN) phase shifters designed for X-band (8–12 GHz), but offering good performance over a much wider band. The first is a 22.5^\circ switched-filter phase shifter, which has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<2 dB), good return loss (>11.15 dB), and an amplitude imbalance of less than 1.03 dB across X-band. The 1-dB compression point was higher than laboratory equipment was able to measure (>38 dBm) and the phase shifter monolithic microwave integrated circuit exhibited an input-referred third-order intercept point (IIP3) of 46.2 dBm. The second phase shifter is a novel design, which promises wide bandwidth (in our case, limited by the single-pole double-throw switch we have also designed), but which achieves decent insertion loss (5 dB), good return loss (better than 11 dB), and very low phase variation (1^\circ) across X-band, also with 22.5^\circ phase shift. It offers a 1-dB compression point of 30.1 dBm and an IIP3 of 46.3 dBm. The components for a 45^\circ differential phase shift using the same structure were also fabricated and verified with measurements. The high-power phase shifters have been fabricated in a 0.5-\mu\ m GaN HEMT process and were designed using an accurate customized switch field-effect transistor model. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 63
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 100246544
- Full Text :
- https://doi.org/10.1109/TMTT.2014.2366149