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Synthesis and field emission studies of tower-like GaN nanowires.
- Source :
- Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-6, 6p
- Publication Year :
- 2014
-
Abstract
- Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [InlineEquation not available: see fulltext.] and [InlineEquation not available: see fulltext.] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials. PACS: 81.15.Gh; 68.37.Lp; 68.37.Vj [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 9
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 100300628
- Full Text :
- https://doi.org/10.1186/1556-276X-9-607