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Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells.
- Source :
- Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-4, 4p
- Publication Year :
- 2014
-
Abstract
- We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps. PACS: 78.47.D; 78.55.Cr; 88.40.hj [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 9
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 100301059
- Full Text :
- https://doi.org/10.1186/1556-276X-9-80