Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance.

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O₂, H₂O, and N₂O as the reactive gases. Experimental results show that the electrical properties of the N₂O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N₂O introduction into the deposition process, where the field mobility reach to 30.8 cm² V¹ s^-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT. [ABSTRACT FROM AUTHOR]