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CHAPTER 3: Modeling of a Power Diode and IGBT: 3.2: MODELING AN NPT IGBT.

Authors :
Gachovska, Tanya K.
Hudgins, Jerry L.
Santi, Enrico
Bryant, Angus
Palmer, Patrick R.
Source :
Modeling Bipolar Power Semiconductor Devices; 2013, p33-38, 6p
Publication Year :
2013

Details

Language :
English
ISBNs :
9781627051224
Database :
Complementary Index
Journal :
Modeling Bipolar Power Semiconductor Devices
Publication Type :
Book
Accession number :
100601076
Full Text :
https://doi.org/10.2200/S00483ED1V01Y201302PEL005