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CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.1: INTRODUCTION.
- Source :
- Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices; 2013, p23-25, 3p
- Publication Year :
- 2013
Details
- Language :
- English
- ISBNs :
- 9781627051903
- Database :
- Complementary Index
- Journal :
- Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices
- Publication Type :
- Book
- Accession number :
- 100687297
- Full Text :
- https://doi.org/10.2200/S00547ED1V01Y201311PEL006