CHAPTER 3: Realization of Power IGBT and Diode Thermal Model: 3.4: TEMPERATURE DEPENDENT PARAMETERS OF DIODES AND THEIR CONNECTION TO AN ELECTRICAL MODEL.

Details

Language :

English

ISBNs :

9781627051903

Database :

Complementary Index

Journal :

Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices

Publication Type :

Book

Accession number :

100687300

Full Text :

https://doi.org/10.2200/S00547ED1V01Y201311PEL006