Growth orientation dependence of Si doping in GaAsN.

MLA

Xiuxun Han, et al. “Growth Orientation Dependence of Si Doping in GaAsN.” Journal of Applied Physics, vol. 117, no. 5, Feb. 2015, pp. 055706-1-055706-4. EBSCOhost, https://doi.org/10.1063/1.4907389.

APA

Xiuxun Han, Chen Dong, Qiang Feng, Yoshio Ohshita, & Masafumi Yamaguchi. (2015). Growth orientation dependence of Si doping in GaAsN. Journal of Applied Physics, 117(5), 055706-1-055706-4. https://doi.org/10.1063/1.4907389

Chicago

Xiuxun Han, Chen Dong, Qiang Feng, Yoshio Ohshita, and Masafumi Yamaguchi. 2015. “Growth Orientation Dependence of Si Doping in GaAsN.” Journal of Applied Physics 117 (5): 055706-1-055706-4. doi:10.1063/1.4907389.