Interface modulation and resistive switching evolution in Pt/NiO/AlO/n-Si structure.

The resistive switching evolution of NiO/AlO in Pt/NiO/AlO/n-Si structure was investigated with postannealing time. When increasing the postannealing time, larger voltage/current is needed to turn on/turn off the structure, respectively. Large memory resistance window can be obtained by the interface modulation of NiO/AlO. For the fresh structure, the low resistance state (LRS) obeys Ohmic conduction mechanism and the high resistance state (HRS) fits Poole-Frenkel-like behavior. With the postannealing time increase, the reaction between NiO and AlO occurs. Finally, the Pt/Ni-Al-O/n-Si structure forms. Schottky emission mechanism has dominated in the HRS, while the LRS shows Poole-Frenkel-like behavior. [ABSTRACT FROM AUTHOR]