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Interface modulation and resistive switching evolution in Pt/NiO/AlO/n-Si structure.
- Source :
- Applied Physics A: Materials Science & Processing; Mar2015, Vol. 118 Issue 4, p1365-1370, 6p, 4 Graphs
- Publication Year :
- 2015
-
Abstract
- The resistive switching evolution of NiO/AlO in Pt/NiO/AlO/n-Si structure was investigated with postannealing time. When increasing the postannealing time, larger voltage/current is needed to turn on/turn off the structure, respectively. Large memory resistance window can be obtained by the interface modulation of NiO/AlO. For the fresh structure, the low resistance state (LRS) obeys Ohmic conduction mechanism and the high resistance state (HRS) fits Poole-Frenkel-like behavior. With the postannealing time increase, the reaction between NiO and AlO occurs. Finally, the Pt/Ni-Al-O/n-Si structure forms. Schottky emission mechanism has dominated in the HRS, while the LRS shows Poole-Frenkel-like behavior. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 118
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 100905473
- Full Text :
- https://doi.org/10.1007/s00339-014-8889-y