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Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity.
- Source :
- IEEE Transactions on Electron Devices; Mar2015, Vol. 62 Issue 3, p840-846, 7p
- Publication Year :
- 2015
-
Abstract
- This paper presents an enhanced, closed-form expression for the thermal resistance, and thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of the temperature-dependent thermal conductivity of GaN and SiC or Si substrates. In addition, the expression accounts for temperature increase across the die-attach. The model’s validity is verified by comparing it with experimental observations. The model results also compare favorably with those from finite-element numerical simulations across the various device geometric and material parameters. The model provides a more accurate channel temperature than that from a constant thermal conductivity assumption; this is particularly significant for GaN/Si HEMTs where the temperature rise is higher than in GaN/SiC. The model is especially useful for device and monolithic microwave integrated circuit designers in the thermal assessment of their device design iterations against required performance for their specific applications. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 101110078
- Full Text :
- https://doi.org/10.1109/TED.2015.2396035