Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors.

Details

Language :

English

ISBNs :

9781479943784

Database :

Complementary Index

Journal :

2014 44th European Solid State Device Research Conference (ESSDERC)

Publication Type :

Conference

Accession number :

101226128

Full Text :

https://doi.org/10.1109/ESSDERC.2014.6948820