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Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy.
- Source :
- Micro & Nano Letters (Wiley-Blackwell); 2013, Vol. 8 Issue 7, p386-389, 4p
- Publication Year :
- 2013
-
Abstract
- This Letter presents a novel small-sized lateral insulated gate bipolar transistor on silicon-on-insulator substrate (SOI-LIGBT), which features a lowly doped p-type pillar alongside the oxide trench in the drift region. The variation in vertical doping termination technology is also proposed for the first time. The p-pillar layer leads to electric field reshaping in the y-direction, and homogenises current flow lines under the gate and cathode. It results in a very wide forward bias safe operating area (FBSOA) for the proposed SOI-LIGBT, which is obviously improved by over 50% compared with the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT). Moreover, at the same forward voltage drop of 1 V, the turnoff energy loss for the proposed SOI-LIGBT is reduced by 28.5 and 81.2% compared with those of DT SOI-LIGBT and the conventional SOI-LIGBT, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 17500443
- Volume :
- 8
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Micro & Nano Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 101625570
- Full Text :
- https://doi.org/10.1049/mnl.2013.0040