High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits.

MLA

Li, Ning, et al. “High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits.” IEEE Transactions on Electron Devices, vol. 62, no. 4, Apr. 2015, pp. 1269–75. EBSCOhost, https://doi.org/10.1109/TED.2015.2403873.

APA

Li, N., Okada, K., Inoue, T., Hirano, T., Bu, Q., Narayanan, A. T., Siriburanon, T., Sakane, H., & Matsuzawa, A. (2015). High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits. IEEE Transactions on Electron Devices, 62(4), 1269–1275. https://doi.org/10.1109/TED.2015.2403873

Chicago

Li, Ning, Kenichi Okada, Takeshi Inoue, Takuichi Hirano, Qinghong Bu, Aravind Tharayil Narayanan, Teerachot Siriburanon, Hitoshi Sakane, and Akira Matsuzawa. 2015. “High-Q Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits.” IEEE Transactions on Electron Devices 62 (4): 1269–75. doi:10.1109/TED.2015.2403873.