Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit.

In this paper, a model of gate capacitance is proposed for ultrathin-body-BOX and double-gate MOSFETs with light mass channel materials. First, the model is derived by making the assumption that only one subband is occupied and using quantum perturbation theory to compute the corresponding energy level. Next, this model is confirmed with Poisson–Schrödinger simulations. Finally, the impacts in terms of performance and scaling are discussed. [ABSTRACT FROM AUTHOR]