Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3.

MLA

Kohei Suda, et al. “Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3.” ECS Journal of Solid State Science & Technology, vol. 4, no. 5, May 2015, pp. P152–54. EBSCOhost, https://doi.org/10.1149/2.0191505jss.

APA

Kohei Suda, Takahiro Kijima, Seiya Ishihara, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, & Atsushi Ogura. (2015). Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3. ECS Journal of Solid State Science & Technology, 4(5), P152–P154. https://doi.org/10.1149/2.0191505jss

Chicago

Kohei Suda, Takahiro Kijima, Seiya Ishihara, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, and Atsushi Ogura. 2015. “Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3.” ECS Journal of Solid State Science & Technology 4 (5): P152–54. doi:10.1149/2.0191505jss.