Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties.

In this paper, we employ different substrate temperatures during the deposition process and observe a highly ordered structure and strong orientation of copper phthalocyanine (CuPc) molecules on Si/SiO[SUB2] by using X-ray-diffraction and transmission electron microscopy analysis. The results show the effect of CuPc morphology at different substrate temperatures on the organic field-effect-transistor performance. When the substrate temperature for deposition of CuPc is 120 °C, a mobility of 3.75 × 10[SUP-3] cm[SUP2]/V s can be obtained. [ABSTRACT FROM AUTHOR]