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Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs.

Authors :
Ya-Hsi Hwang
Shihyun Ahn
Chen Dong
Weidi Zhu
Byung-Jae Kim
Lingcong Le
Fan Ren
Lind, Aaron G.
Dahl, James
Jones, Kevin S.
Pearton, Stephen J.
Kravchenko, Ivan I.
Ming-Lan Zhang
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May/Jun2015, Vol. 33 Issue 3, p031212-1-031212-6, 6p
Publication Year :
2015

Abstract

The degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE) was investigated. The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/  after 3min BOE treatment. The alloyed Ohmic metallization consisted 3–5 µm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Energy dispersive x-ray analysis and Auger electron microscopy were used to analyze the compositions and metal distributions in the metal alloys prior to and after BOE exposure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
33
Issue :
3
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
102848238
Full Text :
https://doi.org/10.1116/1.4919237