Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging.

MLA

Li, Z. J., et al. “Local Strain and Defects in Silicon Wafers Due to Nanoindentation Revealed by Full-Field X-Ray Microdiffraction Imaging.” Journal of Synchrotron Radiation, vol. 22, no. 4, July 2015, pp. 1083–90. EBSCOhost, https://doi.org/10.1107/S1600577515009650.

APA

Li, Z. J., Danilewsky, A. N., Helfen, L., Mikulik, P., Haenschke, D., Wittge, J., Allen, D., McNally, P., & Baumbach, T. (2015). Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging. Journal of Synchrotron Radiation, 22(4), 1083–1090. https://doi.org/10.1107/S1600577515009650

Chicago

Li, Z. J., A. N. Danilewsky, L. Helfen, P. Mikulik, D. Haenschke, J. Wittge, D. Allen, P. McNally, and T. Baumbach. 2015. “Local Strain and Defects in Silicon Wafers Due to Nanoindentation Revealed by Full-Field X-Ray Microdiffraction Imaging.” Journal of Synchrotron Radiation 22 (4): 1083–90. doi:10.1107/S1600577515009650.