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Indication of hysteresis in AlMnN.
- Source :
- Applied Physics Letters; 9/1/2003, Vol. 83 Issue 9, p1758, 3p, 1 Chart, 4 Graphs
- Publication Year :
- 2003
-
Abstract
- AlN films grown by gas-source molecular beam epitaxy were doped with different levels of Mn during growth. High resolution x-ray diffraction characterization revealed good crystallinity in single phase material, with lattice constant decreasing with increasing Mn concentration. Single phase AlMnN was found to be p type while AlMnN/AlMn mixed phase material was found to be highly conductive n type. Magnetization measurements performed with a superconducting quantum interference device magnetometer indicated ferromagnetism in single phase material persisting to 300 K and showed no evidence of room temperature magnetization in multiphase material. In particular, it was shown that Mn[sub 4]N second phases are not contributing to the magnetization in the AlMnN under optimized growth conditions. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- ALUMINUM nitride
THIN films
MOLECULAR beam epitaxy
HYSTERESIS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 83
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 10665030
- Full Text :
- https://doi.org/10.1063/1.1604465