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Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance.
- Source :
- 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2015, p213-216, 4p
- Publication Year :
- 2015
Details
- Language :
- English
- ISBNs :
- 9781479962594
- Database :
- Complementary Index
- Journal :
- 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
- Publication Type :
- Conference
- Accession number :
- 108573651
- Full Text :
- https://doi.org/10.1109/ISPSD.2015.7123427