The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate.

Details

Language :

English

ISBNs :

9781479962594

Database :

Complementary Index

Journal :

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Publication Type :

Conference

Accession number :

108573654

Full Text :

https://doi.org/10.1109/ISPSD.2015.7123430