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Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering.
- Source :
- 2015 IEEE International Reliability Physics Symposium; 2015, p00-EL.5.5, 0p
- Publication Year :
- 2015
Details
- Language :
- English
- ISBNs :
- 9781467373623
- Database :
- Complementary Index
- Journal :
- 2015 IEEE International Reliability Physics Symposium
- Publication Type :
- Conference
- Accession number :
- 108579932
- Full Text :
- https://doi.org/10.1109/IRPS.2015.7112796