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Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure.
- Source :
- Applied Physics Letters; 8/17/2015, Vol. 107 Issue 7, p072901-1-072901-5, 5p, 1 Diagram, 3 Graphs
- Publication Year :
- 2015
-
Abstract
- Reliability and uniformity in resistance switching behaviours in top electrode Cu-sputtered TiO<subscript>2</subscript>-bottom electrode Pt memory structure were greatly improved by inserting an interface layer of 5nm-thick HfO<subscript>2</subscript> between Cu and 50nm-thick TiO<subscript>2</subscript>. The thin HfO<subscript>2</subscript> layer, with much smaller cluster size than TiO<subscript>2</subscript>, limited the Cu migration appropriately and induced more uniform Cu conducting filament distribution. The repeated rejuvenation and rupture of Cu filament was limited within the HfO<subscript>2</subscript> layer, thereby improving the switching reliability and uniformity. This also greatly decreased operation power compared to a memory cell without the thin HfO<subscript>2</subscript> layer. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRODES
COPPER spectra
ELECTRICAL conductors
THIN films
PLATINUM spectra
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 109042659
- Full Text :
- https://doi.org/10.1063/1.4928710