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Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe 2 Ferroelectric–Semiconductor.
- Source :
- Ferroelectrics; 2015, Vol. 481 Issue 1, p77-88, 12p
- Publication Year :
- 2015
-
Abstract
- In this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2ferroelectric – semiconductor with incommensurate (INC) - phase are presented. The aim is to show that electrical and open circuit photovoltage measurements can be effectively used for the study of memory effect of INC – structure in TlGaSe2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00150193
- Volume :
- 481
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 109208119
- Full Text :
- https://doi.org/10.1080/00150193.2015.1049505