Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge4SbTe5.

Phase change materials are identified for their ability to rapidly alternate between the amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are not only primarily used in memory storage applications, but also recently they have been identified as potential thermoelectric materials [D. Lencer et al., Adv. Mater.23, 2030–2058 (2011)]. Many of the phase change materials studied today can be found on the pseudo-binary (GeTe)1−x(Sb2Te3)x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge4SbTe5, a single phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, which forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge4SbTe5 exhibits a thermal conductivity of ∼1.2 W/m K at high temperature and a large Seebeck coefficient of ∼250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense, the work presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature. [ABSTRACT FROM PUBLISHER]