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Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X = Zr, Hf and Y = S, Se).

Authors :
Sikander Azam
Saleem Ayaz Khan
Jan Minar
Wilayat Khan
Haleem Ud Din
R Khenata
G Murtaza
S Bin-Omran
Souraya Goumri-Said
Source :
Semiconductor Science & Technology; Oct2015, Vol. 30 Issue 10, p1-1, 1p
Publication Year :
2015

Abstract

The increase in energy demands is leading to growing interest in new thermoelectric inorganic materials, such as the chalcogenides. The recently synthesized quaternary chalcogenide, Tl<subscript>2</subscript>PbXY<subscript>4</subscript> (X = Zr, Hf and Y = S, Se), compounds were investigated using the full potential linear augmented plane wave method based on density functional theory. We used the generalized gradient approximation plus the optimized effective Hubbard parameter U to treat the exchange correlation. The existence of heavy metals (Tl, Pb and Hf) required the application of relativistic spin–orbit coupling via a second variational procedure. Tl<subscript>2</subscript>PbHfS<subscript>4</subscript>, Tl<subscript>2</subscript>PbHfSe<subscript>4</subscript>, Tl<subscript>2</subscript>PbZrS<subscript>4</subscript> and Tl<subscript>2</subscript>PbZrSe<subscript>4</subscript> compounds were found to be semiconductors with indirect band gaps of 0.911, 0.659, 0.983 and 0.529 eV, respectively. The types of carriers and electrical transport properties of Tl<subscript>2</subscript>PbXY<subscript>4</subscript> (X = Zr, Hf and Y = S, Se) are attributed to the Tl-d and S/Se-s electronic states near the Fermi level. Optical properties were investigated via the calculation of dielectric function and reflectivity. Using Boltzmann theory, we compared the thermoelectric properties and we found that Tl<subscript>2</subscript>PbHfS<subscript>4</subscript> could be a good candidate for thermoelectric devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
30
Issue :
10
Database :
Complementary Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
109574105
Full Text :
https://doi.org/10.1088/0268-1242/30/10/105018