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Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.
- Source :
- IEEE Transactions on Electron Devices; Oct2015, Vol. 62 Issue 10, p3215-3222, 8p
- Publication Year :
- 2015
-
Abstract
- In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiNx gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiNx gate dielectric is identified to be Poole–Frenkel emission at low electric field and Fowler–Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiNx gate dielectric were also investigated. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 109904204
- Full Text :
- https://doi.org/10.1109/TED.2015.2469716