Mist-CVD Grown Sn-Doped $\alpha $ -Ga2O3 MESFETs.

This paper demonstrates the use of cost-effective solution-processed \alpha -Ga2O3 thin films (TFs) for electronic device applications. MESFETs based on AgOx Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped \alpha -Ga2O3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400 °C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 \times 10^6 and 19.6 V, respectively. The ON–OFF ratio of the corresponding transistors was 2 \times 10^7 . The MESFETs that could withstand drain voltages of up to 48 V were also realized. [ABSTRACT FROM AUTHOR]