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GaInNAs/Ge (1.10/0.67 eV) double-junction solar cell grown by metalorganic chemical vapor deposition for high efficiency four-junction solar cell application.
- Source :
- Journal of Physics D: Applied Physics; 12/2/2015, Vol. 48 Issue 47, p1-1, 1p
- Publication Year :
- 2015
-
Abstract
- GaInNAs materials with narrow bandgaps of 1.10 eV have been grown on a Ge substrate by metalorganic chemical vapor deposition to fabricate GaInNAs/Ge (1.10/0.67 eV) double-junction solar cells. We have studied the photovoltaic characteristics and the external quantum efficiencies of the double-junction cells with various annealing conditions and different GaInNAs base layer thicknesses. The best external quantum efficiency is obtained from the double-junction cell with a 1170 nm thick GaInNAs base layer annealed at 675 °C for 30 min. Under AM1.5G illumination, the best double-junction cell has a short circuit current density (J<subscript>SC</subscript>) as 23.63 mA cm<superscript>−2</superscript>, which is dominated by the J<subscript>SC</subscript> of the GaInNAs subcell. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 48
- Issue :
- 47
- Database :
- Complementary Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 110666850
- Full Text :
- https://doi.org/10.1088/0022-3727/48/47/475106