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Coexistence of type-I and type-II band alignments in In0.46Al0.54As/ Ga0.46Al0.54As self-assembled quantum dots.
- Source :
- Applied Physics Letters; 11/2/2015, Vol. 107 Issue 18, p1-4, 4p, 1 Color Photograph, 3 Graphs
- Publication Year :
- 2015
-
Abstract
- Optical properties of In<subscript>0.46</subscript>Al<subscript>0.54</subscript>As/ Ga<subscript>0.46</subscript>Al<subscript>0.54</subscript>As quantum dots (QDs) have been investigated by photoluminescence (PL). At a low temperature of 8K, the PL peak energy blue-shifts 44 meV and the linewidth broadens by 21 meV as the excitation intensity increases by four orders of magnitude. As the temperature increases, the QD spectra demonstrate a fast redshift and narrowing from 35 K. These observations have been explained by the type-II nature of QDs and the lateral carrier transfer due to electronic coupling between neighboring QDs. A special double exponential decay behavior indicates the coexistence of type-I and type-II band alignment in this QD sample. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 110830946
- Full Text :
- https://doi.org/10.1063/1.4935161