Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process.

MLA

Wang Yan-Rong, et al. “Influence of Multi-Deposition Multi-Annealing on Time-Dependent Dielectric Breakdown Characteristics of PMOS with High-k/Metal Gate Last Process.” Chinese Physics B, vol. 24, no. 11, Nov. 2015, p. 1. EBSCOhost, https://doi.org/10.1088/1674-1056/24/11/117306.

APA

Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun, & Wang Wen-Wu. (2015). Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process. Chinese Physics B, 24(11), 1. https://doi.org/10.1088/1674-1056/24/11/117306

Chicago

Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, et al. 2015. “Influence of Multi-Deposition Multi-Annealing on Time-Dependent Dielectric Breakdown Characteristics of PMOS with High-k/Metal Gate Last Process.” Chinese Physics B 24 (11): 1. doi:10.1088/1674-1056/24/11/117306.