The effect of gate drive topology on online silicon carbide MOSFET junction temperature sensing.

MLA

Niu, He, and Robert D. Lorenz. “The Effect of Gate Drive Topology on Online Silicon Carbide MOSFET Junction Temperature Sensing.” 2015 European Conference on Circuit Theory & Design (ECCTD), Jan. 2015, pp. 7015–22. EBSCOhost, https://doi.org/10.1109/ECCE.2015.7310642.

APA

Niu, H., & Lorenz, R. D. (2015). The effect of gate drive topology on online silicon carbide MOSFET junction temperature sensing. 2015 European Conference on Circuit Theory & Design (ECCTD), 7015–7022. https://doi.org/10.1109/ECCE.2015.7310642

Chicago

Niu, He, and Robert D. Lorenz. 2015. “The Effect of Gate Drive Topology on Online Silicon Carbide MOSFET Junction Temperature Sensing.” 2015 European Conference on Circuit Theory & Design (ECCTD), January, 7015–22. doi:10.1109/ECCE.2015.7310642.