Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN.

Authors :: Jeong, T.S.
Youn, C.J.
Hab, M.S.
Yang, J.W.
Lim, K.Y.
Source :: Applied Physics Letters; 10/27/2003, Vol. 83 Issue 17, p3483, 3p, 4 Graphs
Publication Year :: 2003
Abstract: We have studied the influence of electric fields on the Mg-doped p-GaN by using Raman scattering and photocurrent (PC) measurement. It has been observed that the E[sub 2] (LO) mode was quenched upon increasing the electric field. To explain this effect, the combined results obtained from the electric-field-induced Raman scattering and the PC measurement were analyzed. As a result, we have found that the damping of E[sub 2] (LO) mode is caused to the phonon–hole scattering due to a strong interaction between the phonons and the photogenerated hole carriers with increasing the applied electric field. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]