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In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.

Authors :
He Tian
Haiming Zhao
Xue-Feng Wang
Qian-Yi Xie
Hong-Yu Chen
Mohammad Ali Mohammad
Cheng Li
Wen-Tian Mi
Zhi Bie
Chao-Hui Yeh
Yi Yang
Wong, H-S Philip
Po-Wen Chiu
Tian-Ling Ren
Source :
Advanced Materials; 12/16/2015, Vol. 27 Issue 47, p7767-7774, 8p
Publication Year :
2015

Details

Language :
English
ISSN :
09359648
Volume :
27
Issue :
47
Database :
Complementary Index
Journal :
Advanced Materials
Publication Type :
Academic Journal
Accession number :
111832836
Full Text :
https://doi.org/10.1002/adma.201503125