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In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.
- Source :
- Advanced Materials; 12/16/2015, Vol. 27 Issue 47, p7767-7774, 8p
- Publication Year :
- 2015
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 27
- Issue :
- 47
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 111832836
- Full Text :
- https://doi.org/10.1002/adma.201503125