Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates.

Quasi-free-standing epitaxialgraphenegrown on wide band gap semiconductorSiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxialgraphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphenetransistor shows improved DC and RF performances including a maximum current density Ids of 4.2 A/mm, and a peak transconductance g_m of 2880 mS/mm. Intrinsic current-gain cutoff frequency fT of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxialgraphenetransistor show the great application potential of this material system. [ABSTRACT FROM AUTHOR]