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Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers.

Authors :
Juan Paolo Bermundo
Yasuaki Ishikawa
Mami N Fujii
Toshiaki Nonaka
Ryoichi Ishihara
Hiroshi Ikenoue
Yukiharu Uraoka
Source :
Journal of Physics D: Applied Physics; 1/27/2016, Vol. 49 Issue 3, p1-1, 1p
Publication Year :
2016

Abstract

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> and small threshold voltage which varied from ~0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
49
Issue :
3
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
112180610
Full Text :
https://doi.org/10.1088/0022-3727/49/3/035102