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Geometric, electronic and optical properties of zinc/tin codoped In2O3 modulated by the bixbyite/corundum phase transition.

Authors :
Ying-Bo Lu
Y H Li
Z C Ling
Wei-Yan Cong
Peng Zhang
Y Q Xin
T L Yang
Source :
Journal of Physics D: Applied Physics; 2/17/2016, Vol. 49 Issue 6, p1-1, 1p
Publication Year :
2016

Abstract

As transparent conducting oxides (TCOs), In<subscript>2</subscript>O<subscript>3</subscript> in the high pressure phase attracts extensive research interests. Because physical properties are determined by the geometric structures, we investigate the electronic and optical properties of Zn/Sn codoped In<subscript>2</subscript>O<subscript>3</subscript> materials (IZTO) being modulated by the bixbyite/corundum phase transition via Density Functional Theory calculations. For IZTO in high pressure phase, i.e. corundum phase, Sn/Zn dopant pair tends to form face-sharing ZnO<subscript>6</subscript> and SnO<subscript>6</subscript> octahedrons. The radius differences between Zn<superscript>2+</superscript>/Sn<superscript>4+</superscript> dopants and In<superscript>3+</superscript> host cations make Jahn-Teller effect occur and IZTO transform from bixbyite to corundum phase under a slight higher pressure than that of pure In<subscript>2</subscript>O<subscript>3</subscript>. Although Zn/Sn cosubstitution of In ions may increase the free carrier effective mass m<superscript>*</superscript> near the band edge, when IZTO crystal transforms to corundum phase, the more dense packing structure results in stronger cation s-orbital overlaps than in bixbyite phase, which makes m<superscript>*</superscript> recover to a smaller value. In addition, corundum IZTO has a larger indirect band gap and a high dopant solubility. So these investigations may open a new way to search for TCOs materials with low indium content. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
49
Issue :
6
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
112321951
Full Text :
https://doi.org/10.1088/0022-3727/49/6/065105